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formed beam

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См. также в других словарях:

  • beam — beamless, adj. beamlike, adj. /beem/, n. 1. any of various relatively long pieces of metal, wood, stone, etc., manufactured or shaped esp. for use as rigid members or parts of structures or machines. 2. Building Trades. a horizontal bearing… …   Universalium

  • BEAM —    an ancient prov. of France, fell to the crown with the accession of Henry IV. in 1589; formed a great part of the dep. of Basses Pyrénées, capital Pau …   The Nuttall Encyclopaedia

  • I-beam — I beams (also known as W beams or double T esp. in Polish and German) are beams with an I or H shaped cross section ( W stands for wide flange ). The horizontal elements are flanges, while the vertical element is the web. The Euler Bernoulli beam …   Wikipedia

  • Gas cluster ion beam — Gas Cluster Ion Beams (GCIB) is a new technology for nano scale modification of surfaces. It can smooth a wide variety of surface material types to within an angstrom of roughness without subsurface damage. It is also used to chemically alter… …   Wikipedia

  • Laser beam profiler — A laser beam profiler captures, displays, and records the spatial intensity profile of a laser beam at a particular plane transverse to the beam propagation path. Since there are many types of lasers ultraviolet, visible, infrared, continuous… …   Wikipedia

  • Electron beam lithography — (often abbreviated as e beam lithography) is the practice of scanning a beam of electrons in a patterned fashion across a surface covered with a film (called the resist),cite book |last= McCord |first=M. A. |coauthors=M. J. Rooks |title=… …   Wikipedia

  • Complex beam parameter — In optics, the complex beam parameter is a complex number that specifies the properties of a Gaussian beam at a particular point z along the axis of the beam. It is usually denoted by q. It can be calculated from the beam s vacuum wavelength λ0,… …   Wikipedia

  • Ion-beam sculpting — Ion Beam scultping is a term used to describe a two step process to make solid state nanopores. The term itself was coined by Golovchenko and co workers at Harvard in the paper Ion beam sculpting at nanometer length scales [J. Li, D. Stein, C.… …   Wikipedia

  • Molecular beam epitaxy — A simple sketch showing the main components and rough layout and concept of the main chamber in a Molecular Beam Epitaxy system Molecular beam epitaxy (MBE) is one of several methods of depositing single crystals. It was invented in the late… …   Wikipedia

  • Molecular-beam epitaxy — (MBE), is one of several methods of depositing single crystals. It was invented in the late 1960s at Bell Telephone Laboratories by J. R. Arthur and Alfred Y. Cho.MethodMolecular beam epitaxy takes place in high vacuum or ultra high vacuum (10−8… …   Wikipedia

  • Electron beam induced current — (EBIC) is a semiconductor analysis technique performed in a scanning electron microscope (SEM) or scanning transmission electron microscope (STEM). It is used to identify buried junctions or defects in semiconductors, or to examine minority… …   Wikipedia

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